International Journal of Research and Development in Engineering Sciences (IJRDES ) | Smart Thermal Control for Next-Gen 3D ICs

Smart Thermal Control for Next-Gen 3D ICs

Through TTSV, One of the emerging technologies that is well-suited to CMOS implementations is 3D IC integration, which entails vertically stacking many IC layers. Through Silicon Vias (TSVs) and Cu-Cu bonding are used to physically and electrically connect the IC layers of a 3D IC. Important restrictions in 3D IC designs that have a significant effect on overall system performance are thermal issues between layers and noise coupling between TSV-to-substrate and TSV-to-TSV. Heat spreaders and thermal through silicon vias (TTSVs) play crucial roles in 3-D IC integration. The failure of an integrated circuit (IC) is often caused by excessive heat building up in one area, however heat spreaders and FIN to TTSV have been proposed as solutions in recent years. When a voltage is applied to a three-dimensional integrated circuit (3D IC), the temperature of the IC rises, potentially resulting in the IC's failure. To mitigate this risk, engineers have added fin to the TTSV using a variety of strategies, each of which optimizes the heat dissipation in a different direction. Both carbon Nanotubes (CNTs) and Graphene, which are used for their excellent thermal cooling properties, are widely disseminated. Using ideal orientations and heat spreaders, this study demonstrates a FIN that effectively disperses heat in all directions and transfers thermal energy to a heat sink. We also showed how different thermal cooling effects affect the IC's potential distribution in different circumstances. Based on our findings, Carbon Nanotubes (CNTs) are more effective than Graphene in dissipating heat away from both heat sources and TSVs. We tested the effects of changing the dielectric properties of the model by including Al2o3, Si3N4, and SiO2 as examples.

Research Type: Laboratory Research
Paper Type: Experimental Research Paper
Vol.7 , Issue 5 , Pages: 37 – 41, Oct 2025
Published on: 21 Oct, 2025
Issue Type: Regular

Cite Score

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100
No. of authors

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75
No. of Downloads

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43

Cite Score

:

100
No. of authors

:

75
No. of Downloads

:

43

Cite Score

:

100
No. of authors

:

75
No. of Downloads

:

43

About Authors:

M.SIVA KUMAR

India

Viswam Engineering College

Copyright © 2025, This is an open-access article distributed under the terms of the Creative Commons Attribution License (CC-BY-NY-SA). The use, distribution or reproduction in other forums is permitted, provided the original author(s) and the copyright owner(s) are credited and that the original publication in this journal is cited, in accordance with accepted academic practice. No use, distribution or reproduction is permitted which does not comply with these terms.

*Corresponding Author: M.SIVA KUMAR, sivakumar450@gmail.com

Disclaimer: All claims expressed in this article are solely those of the authors and do not necessarily represent those of their affiliated organizations, or those of the publisher, the editors and the reviewers. Any product that may be evaluated in this article or claim that may be made by its manufacturer is not guaranteed or endorsed by the publisher.

Conflict of interest: The author declares that the research was conducted in the absence of any commercial or financial relationships that could be construed as a potential conflict of interest.

Publisher’s note: All claims expressed in this article are solely those of the authors and do not necessarily represent those of their affiliated organizations, or those of the publisher, the editors and the reviewers. Any product that may be evaluated in this article, or claim that may be made by its manufacturer, is not guaranteed or endorsed by the publisher.