Through TTSV, One of the emerging technologies that is well-suited to CMOS implementations is 3D IC integration, which entails vertically stacking many IC layers. Through Silicon Vias (TSVs) and Cu-Cu bonding are used to physically and electrically connect the IC layers of a 3D IC. Important restrictions in 3D IC designs that have a significant effect on overall system performance are thermal issues between layers and noise coupling between TSV-to-substrate and TSV-to-TSV. Heat spreaders and thermal through silicon vias (TTSVs) play crucial roles in 3-D IC integration. The failure of an integrated circuit (IC) is often caused by excessive heat building up in one area, however heat spreaders and FIN to TTSV have been proposed as solutions in recent years. When a voltage is applied to a three-dimensional integrated circuit (3D IC), the temperature of the IC rises, potentially resulting in the IC's failure. To mitigate this risk, engineers have added fin to the TTSV using a variety of strategies, each of which optimizes the heat dissipation in a different direction. Both carbon Nanotubes (CNTs) and Graphene, which are used for their excellent thermal cooling properties, are widely disseminated. Using ideal orientations and heat spreaders, this study demonstrates a FIN that effectively disperses heat in all directions and transfers thermal energy to a heat sink. We also showed how different thermal cooling effects affect the IC's potential distribution in different circumstances. Based on our findings, Carbon Nanotubes (CNTs) are more effective than Graphene in dissipating heat away from both heat sources and TSVs. We tested the effects of changing the dielectric properties of the model by including Al2o3, Si3N4, and SiO2 as examples.
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